Microchip 150 V 35 A Diode 2-Pin A 1N5806
- N° de stock RS:
- 333-198
- Référence fabricant:
- 1N5806
- Fabricant:
- Microchip
Sous-total (1 boîte de 52 unités)*
441,168 €
(TVA exclue)
533,832 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Nouveau produit - précommandez dès aujourd'hui
- Expédition à partir du 21 août 2026
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Unité | Prix par unité | La Boite* |
|---|---|---|
| 52 + | 8,484 € | 441,17 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 333-198
- Référence fabricant:
- 1N5806
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | A | |
| Maximum Continuous Forward Current If | 35A | |
| Peak Reverse Repetitive Voltage Vrrm | 150V | |
| Diode Configuration | Single | |
| Series | 1N5806 | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 175°C | |
| Peak Reverse Recovery Time trr | 25ns | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type A | ||
Maximum Continuous Forward Current If 35A | ||
Peak Reverse Repetitive Voltage Vrrm 150V | ||
Diode Configuration Single | ||
Series 1N5806 | ||
Pin Count 2 | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 175°C | ||
Peak Reverse Recovery Time trr 25ns | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip Ultrafast Recovery rectifier diode series is military qualified and is ideal for high reliability applications where a failure cannot be tolerated. The industry recognized 2.5 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void less glass construction using an internal Category 1 metallurgical bond. These devices are available in both leaded and surface mount MELF package configurations.
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power capability
Inherently radiation hard as described in Microchip MicroNote 050
Quadruple layer passivation
Extremely robust construction
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