Microchip 150 V 35 A Diode 2-Pin D-5A 1N5806US
- N° de stock RS:
- 333-160
- Référence fabricant:
- 1N5806US
- Fabricant:
- Microchip
Sous-total (1 boîte de 48 unités)*
436,51 €
(TVA exclue)
528,19 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Nouveau produit - précommandez dès aujourd'hui
- Expédition à partir du 26 mai 2027
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Unité | Prix par unité | La Boite* |
|---|---|---|
| 48 + | 9,094 € | 436,51 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 333-160
- Référence fabricant:
- 1N5806US
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | D-5A | |
| Maximum Continuous Forward Current If | 35A | |
| Peak Reverse Repetitive Voltage Vrrm | 150V | |
| Series | 1N5806 | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 175°C | |
| Peak Reverse Recovery Time trr | 25ns | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type D-5A | ||
Maximum Continuous Forward Current If 35A | ||
Peak Reverse Repetitive Voltage Vrrm 150V | ||
Series 1N5806 | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 175°C | ||
Peak Reverse Recovery Time trr 25ns | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip Ultrafast Recovery rectifier diode series is military qualified and is ideal for high reliability applications where a failure cannot be tolerated. The industry recognized 2.5 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void less glass construction using an internal Category 1 metallurgical bond. These devices are available in both surface mount MELF and leaded package configurations.
Quadruple layer passivation
Extremely robust construction
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power capability
Inherently radiation hard as described in Microchip MicroNote 050
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