onsemi 1200 V 50 A Diode 2-Pin TO-247-2LD NDSH50120C-F155
- N° de stock RS:
- 277-032
- Référence fabricant:
- NDSH50120C-F155
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
21,61 €
(TVA exclue)
26,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 391 unité(s) expédiée(s) à partir du 25 mai 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 21,61 € |
| 10 - 99 | 19,45 € |
| 100 + | 17,94 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 277-032
- Référence fabricant:
- NDSH50120C-F155
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 50A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | NDSH | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Forward Voltage Vf | 1.75V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1568A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 50A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series NDSH | ||
Pin Count 2 | ||
Peak Reverse Current Ir 200μA | ||
Maximum Forward Voltage Vf 1.75V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1568A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- Pays d'origine :
- CN
The ON Semiconductor Silicon Carbide Schottky Diode uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Avalanche rated 380 mJ
High surge current capacity
Positive temperature coefficient
Ease of paralleling
No reverse recovery