onsemi 1200 V 50 A Diode 2-Pin TO-247-2LD NDSH50120C-F155
- N° de stock RS:
- 277-032
- Référence fabricant:
- NDSH50120C-F155
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
21,61 €
(TVA exclue)
26,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 391 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 21,61 € |
| 10 - 99 | 19,45 € |
| 100 + | 17,94 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 277-032
- Référence fabricant:
- NDSH50120C-F155
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 50A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | NDSH | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1568A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 50A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series NDSH | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1568A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 200μA | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- Pays d'origine :
- CN
The ON Semiconductor Silicon Carbide Schottky Diode uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Avalanche rated 380 mJ
High surge current capacity
Positive temperature coefficient
Ease of paralleling
No reverse recovery
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