onsemi 650 V 10 A Diode 2-Pin TO-247-2LD FFSH1065B-F155
- N° de stock RS:
- 277-069
- Référence fabricant:
- FFSH1065B-F155
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
9,12 €
(TVA exclue)
11,035 €
(TVA incluse)
Ajouter 45 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 13 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,824 € | 9,12 € |
| 50 - 95 | 1,732 € | 8,66 € |
| 100 - 495 | 1,604 € | 8,02 € |
| 500 - 995 | 1,478 € | 7,39 € |
| 1000 + | 1,424 € | 7,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 277-069
- Référence fabricant:
- FFSH1065B-F155
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | FFSH | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 600A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Reverse Current Ir | 160μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series FFSH | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 600A | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Reverse Current Ir 160μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- Pays d'origine :
- CN
The ON Semiconductor Schottky diode offer superior switching performance and higher reliability compared to traditional Silicon diodes. It features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, making SiC the next generation of power semiconductors. The system benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and smaller, more cost-effective system designs. These advantages make SiC Schottky diodes ideal for high-performance power applications.
Max junction temperature 175°C
Avalanche rated 51 mJ
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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