onsemi 1.2 kV 26 A Diode 2-Pin TO-247-2LD NDSH20120C-F155
- N° de stock RS:
- 218-673
- Référence fabricant:
- NDSH20120C-F155
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 1 unité)*
8,56 €
(TVA exclue)
10,36 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Paquet(s) | le paquet |
|---|---|
| 1 - 9 | 8,56 € |
| 10 - 99 | 7,70 € |
| 100 - 499 | 7,10 € |
| 500 - 999 | 6,59 € |
| 1000 + | 5,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 218-673
- Référence fabricant:
- NDSH20120C-F155
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 26A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Series | NDSH | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 200μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 896A | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 26A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Series NDSH | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 200μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 896A | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- Pays d'origine :
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
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