BGAP2S20AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 34.8 dB, 16-Pin 2700 MHz TSNP-16
- N° de stock RS:
- 349-418
- Référence fabricant:
- BGAP2S20AE6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
6,23 €
(TVA exclue)
7,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,23 € |
| 10 - 99 | 5,62 € |
| 100 - 499 | 5,16 € |
| 500 - 999 | 4,80 € |
| 1000 + | 4,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-418
- Référence fabricant:
- BGAP2S20AE6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Operating Frequency | 2700 MHz | |
| Product Type | Pre-Driver for Wireless Infrastructure Applications | |
| Technology | BiCMOS | |
| Gain | 34.8dB | |
| Minimum Supply Voltage | 4.75V | |
| Package Type | TSNP-16 | |
| Maximum Supply Voltage | 5.5V | |
| Pin Count | 16 | |
| Third Order Intercept OIP3 | 34.2dBm | |
| Noise Figure | 4.3dB | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 115°C | |
| Height | 8mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Operating Frequency 2700 MHz | ||
Product Type Pre-Driver for Wireless Infrastructure Applications | ||
Technology BiCMOS | ||
Gain 34.8dB | ||
Minimum Supply Voltage 4.75V | ||
Package Type TSNP-16 | ||
Maximum Supply Voltage 5.5V | ||
Pin Count 16 | ||
Third Order Intercept OIP3 34.2dBm | ||
Noise Figure 4.3dB | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 115°C | ||
Height 8mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω.
BiCMOS technology for an optimized performance
High gain and high power for fewer components in line up
Internal matching and saving external matching components
Easy design in and small area footprint
Liens connexes
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