BGAP2D30AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 35.2 dB, 16-Pin 4200 MHz TSNP-16
- N° de stock RS:
- 349-417
- Référence fabricant:
- BGAP2D30AE6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
6,23 €
(TVA exclue)
7,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 10 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,23 € |
| 10 - 99 | 5,62 € |
| 100 - 499 | 5,16 € |
| 500 - 999 | 4,80 € |
| 1000 + | 4,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-417
- Référence fabricant:
- BGAP2D30AE6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Pre-Driver for Wireless Infrastructure Applications | |
| Operating Frequency | 4200 MHz | |
| Technology | BiCMOS | |
| Gain | 35.2dB | |
| Package Type | TSNP-16 | |
| Minimum Supply Voltage | 4.75V | |
| Pin Count | 16 | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Noise Figure | 4.5dB | |
| Third Order Intercept OIP3 | 34.5dBm | |
| Maximum Operating Temperature | 115°C | |
| Height | 8mm | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Pre-Driver for Wireless Infrastructure Applications | ||
Operating Frequency 4200 MHz | ||
Technology BiCMOS | ||
Gain 35.2dB | ||
Package Type TSNP-16 | ||
Minimum Supply Voltage 4.75V | ||
Pin Count 16 | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Noise Figure 4.5dB | ||
Third Order Intercept OIP3 34.5dBm | ||
Maximum Operating Temperature 115°C | ||
Height 8mm | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon 3.3 to 4.2 GHz mid band driver amplifier that can be used as pre driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications.
BiCMOS technology for an optimized performance
High gain and high power for fewer components in line up
Internal matching and saving external matching components
Easy design in and small area footprint