Infineon BTF60702ERVXUMA1 High Side 2 Power Switch IC 14-Pin, PG-TDSO-14
- N° de stock RS:
- 250-0573
- Référence fabricant:
- BTF60702ERVXUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
3,35 €
(TVA exclue)
4,05 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 - 9 | 3,35 € |
| 10 - 24 | 3,19 € |
| 25 - 49 | 3,11 € |
| 50 - 99 | 2,92 € |
| 100 + | 2,71 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 250-0573
- Référence fabricant:
- BTF60702ERVXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Switch IC | |
| Power Switch Topology | High Side | |
| Switch On Resistance RdsOn | 135mΩ | |
| Number of Inputs | 2 | |
| Mount Type | Surface | |
| Package Type | PG-TDSO-14 | |
| Maximum Supply Voltage | 48V | |
| Pin Count | 14 | |
| Operating Current | 3A | |
| Maximum Operating Temperature | 150°C | |
| Minimum Operating Temperature | -40°C | |
| Standards/Approvals | RoHS | |
| Length | 8.65mm | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q11, AEC-Q100, AEC-Q2 | |
| Series | BTF6070-2ERV | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Switch IC | ||
Power Switch Topology High Side | ||
Switch On Resistance RdsOn 135mΩ | ||
Number of Inputs 2 | ||
Mount Type Surface | ||
Package Type PG-TDSO-14 | ||
Maximum Supply Voltage 48V | ||
Pin Count 14 | ||
Operating Current 3A | ||
Maximum Operating Temperature 150°C | ||
Minimum Operating Temperature -40°C | ||
Standards/Approvals RoHS | ||
Length 8.65mm | ||
Height 1.15mm | ||
Automotive Standard AEC-Q11, AEC-Q100, AEC-Q2 | ||
Series BTF6070-2ERV | ||
The Infineon makes this 60 mΩ dual channel smart High-Side power switch, embedded in a PG-TDSO-14, exposed pad package, providing protective functions and diagnosis. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive valve applications in the harsh automotive environment. For lighting applications the nominal bulb load of P10W+P5W 24 V or P10W 12 V is considered.
Fast demagnetization of inductive loads
Optimized Electromagnetic Compatibility (EMC)
Overload protection, current limitation, short circuit protection, thermal shutdown with restart
Reverse battery protection with external resistor and Electrostatic Discharge (ESD) protection