Infineon High Side 1, High Side Power Switch IC 8-Pin, TDSO
- N° de stock RS:
- 223-8479
- Référence fabricant:
- BTS52001ENAXUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
1 446,00 €
(TVA exclue)
1 749,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,482 € | 1 446,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 223-8479
- Référence fabricant:
- BTS52001ENAXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Power Switch Topology | High Side | |
| Product Type | Power Switch IC | |
| Power Switch Type | High Side | |
| Switch On Resistance RdsOn | 200mΩ | |
| Number of Inputs | 1 | |
| Mount Type | Surface | |
| Minimum Supply Voltage | -0.3V | |
| Package Type | TDSO | |
| Pin Count | 8 | |
| Maximum Supply Voltage | 28V | |
| Minimum Operating Temperature | -40°C | |
| Operating Current | 1.5A | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 4.9mm | |
| Height | 1.15mm | |
| Automotive Standard | AEC | |
| Series | PROFET | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Power Switch Topology High Side | ||
Product Type Power Switch IC | ||
Power Switch Type High Side | ||
Switch On Resistance RdsOn 200mΩ | ||
Number of Inputs 1 | ||
Mount Type Surface | ||
Minimum Supply Voltage -0.3V | ||
Package Type TDSO | ||
Pin Count 8 | ||
Maximum Supply Voltage 28V | ||
Minimum Operating Temperature -40°C | ||
Operating Current 1.5A | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 4.9mm | ||
Height 1.15mm | ||
Automotive Standard AEC | ||
Series PROFET | ||
The Infineon BTS5200 series is a 200mΩ single channel smart high-side power switch, embedded in a PG-TDSO-8-31, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in smart6 technology.
Electrostatic discharge protection
Optimized electromagnetic compatibility
Logic ground independent from load ground
Very low power DMOS leakage current in OFF state
Green product
AEC qualified
Liens connexes
- Infineon BTS52001ENAXUMA1 High Side 1 TDSO
- Infineon High Side TDSO
- Infineon BTT62001ENAXUMA1 High Side TDSO
- Infineon High Side 2 Power Switch IC 14-Pin, PG-TDSO-14
- Infineon BTF60702ERVXUMA1 High Side 2 Power Switch IC 14-Pin, PG-TDSO-14
- Infineon Low Side 4 TDSO-8
- Infineon Low Side 1 TDSO-8
- Infineon High Side, High Side Power Switch IC
