Vishay IRFL9014 Type P-Channel Power MOSFET, -1.8 A, -60 V Enhancement, 4-Pin SOT-223

N° de stock RS:: 919-0824
Référence fabricant:: IRFL9014TRPBF
Fabricant:: Vishay

Vishay IRFL9014 Type P-Channel Power MOSFET, -1.8 A, -60 V Enhancement, 4-Pin SOT-223

Sous-total (1 bobine de 2500 unités)*

867,50 €

(TVA exclue)

1 050,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

2 500 unité(s) expédiée(s) à partir du 04 décembre 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	la bobine*
2500 +	0,347 €	867,50 €

*Prix donné à titre indicatif

N° de stock RS:: 919-0824
Référence fabricant:: IRFL9014TRPBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	-1.8A
	Maximum Drain Source Voltage Vds	-60V
	Package Type	SOT-223
	Series	IRFL9014
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3.1W
	Typical Gate Charge Qg @ Vgs	12nC
	Forward Voltage Vf	-5.5V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Width	3.7mm
	Length	6.7mm
	Standards/Approvals	RoHS
	Height	1.45mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id -1.8A
	Maximum Drain Source Voltage Vds -60V
	Package Type SOT-223
	Series IRFL9014
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3.1W
	Typical Gate Charge Qg @ Vgs 12nC
	Forward Voltage Vf -5.5V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Width 3.7mm
	Length 6.7mm
	Standards/Approvals RoHS
	Height 1.45mm
	Automotive Standard No

Pays d'origine :: MY

Vishay IRFL9014 Series Power MOSFET, -60V Drain Source Voltage, 500mΩ Drain Source Resistance - IRFL9014TRPBF

This power MOSFET is a P‑channel enhancement device designed for surface‑mount power switching in electronic and electromechanical systems. It operates across a wide temperature range and is intended for applications requiring controlled high‑side switching and thermal robustness in Compact SOT‑223 packaging.

Features and Benefits:

• P‑channel configuration enables simplified high‑side switching
• Rated for -60V drain‑to‑source withstand for robust voltage margins
• Continuous drain current of -1.8A supports moderate load currents
• Low on‑resistance of 500mΩ reduces conduction losses
• Typical gate charge of 12nC yields predictable switching behaviour
• Power dissipation of 3.1W allows sustained operation in constrained enclosures

Applications

• Suitable for high‑side load switching in automation control modules
• Ideal for battery management and power path control circuits
• Used for motor driver gate networks in Compact assemblies
• Can be used for polarity protection and reverse current prevention

What gate voltage range is permissible for control circuitry?

The gate‑to‑source can be driven up to 20V, allowing compatibility with a range of controller output levels.

How does the thermal environment affect operational limits?

The device is specified to function from -55°C up to 150°C, so thermal design should ensure junction temperatures remain within this range for reliable operation.

What mounting considerations apply for Compact board designs?

It is supplied in a SOT‑223 surface‑mount package with four pins, enabling straightforward PCB soldering and heat transfer to the board copper.

What electrical robustness should designers expect under switching conditions?

The specified forward voltage of -5.5V and typical gate charge of 12nC inform designers about driving requirements and switching transients for reliable gate control.