Vishay IRFL210 Type N-Channel Power MOSFET, 960 mA, 200 V Enhancement, 4-Pin SOT-223 IRFL210TRPBF
- N° de stock RS:
- 815-2736
- Référence fabricant:
- IRFL210TRPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
7,87 €
(TVA exclue)
9,52 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 1 690 unité(s) expédiée(s) à partir du 15 juillet 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,787 € | 7,87 € |
| 100 - 240 | 0,63 € | 6,30 € |
| 250 - 490 | 0,552 € | 5,52 € |
| 500 - 990 | 0,511 € | 5,11 € |
| 1000 + | 0,462 € | 4,62 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 815-2736
- Référence fabricant:
- IRFL210TRPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 960mA | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SOT-223 | |
| Series | IRFL210 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 8.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7mm | |
| Standards/Approvals | RoHS | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 960mA | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SOT-223 | ||
Series IRFL210 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 8.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Operating Temperature 150°C | ||
Width 3.7mm | ||
Standards/Approvals RoHS | ||
Length 6.7mm | ||
Height 1.8mm | ||
Automotive Standard No | ||
Vishay IRFL210 Series Power MOSFET, 200V Maximum Drain Source Voltage, 960mA Maximum Continuous Drain Current - IRFL210TRPBF
This power MOSFET is a surface-mount N-channel enhancement device designed for switching and amplification in electronic control and power-conversion circuits. It offers high-voltage capability and a gate-drive range suitable for low-voltage control, making it appropriate for applications requiring Compact SOT-223 packaging and moderate continuous drain performance.
Features and Benefits:
• 200V Vds enabling high-voltage switching capability
• 1.5Ω Rds providing predictable on-resistance for load control
• 960mA continuous drain current supporting moderate loads
• 8.2nC typical gate charge enabling low-drive energy requirements
• 20V maximum gate-source voltage allowing standard gate-drive margins
• 3.1W power dissipation for thermal planning in constrained assemblies
• 1.5Ω Rds providing predictable on-resistance for load control
• 960mA continuous drain current supporting moderate loads
• 8.2nC typical gate charge enabling low-drive energy requirements
• 20V maximum gate-source voltage allowing standard gate-drive margins
• 3.1W power dissipation for thermal planning in constrained assemblies
Applications
• Suitable for mid-voltage power supplies and converters
• Ideal for motor drive control in small automation systems
• Used for switch-mode regulation in instrumentation
• Can be used for load switching in control panels
• Ideal for motor drive control in small automation systems
• Used for switch-mode regulation in instrumentation
• Can be used for load switching in control panels
What operating temperature range can I expect for reliability?
The device operates from -55°C up to a maximum junction temperature of 150°C, which informs thermal design and derating for sustained use.
How should I account for package-related thermal limits?
Maximum power dissipation is 3.1W
thermal management must consider PCB copper area and ambient conditions to avoid exceeding this limit.
What gate-drive constraints must be observed?
Gate voltage must not exceed 20V to prevent gate-oxide stress, and the typical gate charge of 8.2nC determines the required drive current for switching speeds.
What mechanical footprint considerations are there for assembly?
The component is supplied in an SOT-223 package with a pin count of 4, which affects solder-pad layout and reflow profiles.
Are there restrictions on continuous current capability?
Continuous drain current is specified at 960mA, so designs should include margin for inrush and transient conditions.
Liens connexes
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