IXYS X2-Class N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXTP8N65X2
- N° de stock RS:
- 917-1479
- Référence fabricant:
- IXTP8N65X2
- Fabricant:
- IXYS
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 917-1479
- Référence fabricant:
- IXTP8N65X2
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | X2-Class | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 500 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Width | 15.9mm | |
| Forward Diode Voltage | 1.4V | |
| Height | 4.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 650 V | ||
Series X2-Class | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 500 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.3mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Width 15.9mm | ||
Forward Diode Voltage 1.4V | ||
Height 4.7mm | ||
Minimum Operating Temperature -55 °C | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Liens connexes
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-220 IXTP2N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IXTP4N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IXTP8N65X2M
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH12N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
