IXYS X2-Class Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247 IXTH80N65X2
- N° de stock RS:
- 917-1435
- Numéro d'article Distrelec:
- 302-53-425
- Référence fabricant:
- IXTH80N65X2
- Fabricant:
- IXYS
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
10,11 €
(TVA exclue)
12,23 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 11 unité(s) expédiée(s) à partir du 31 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 10,11 € |
| 5 + | 9,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 917-1435
- Numéro d'article Distrelec:
- 302-53-425
- Référence fabricant:
- IXTH80N65X2
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | X2-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 137nC | |
| Maximum Power Dissipation Pd | 890W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.34mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series X2-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 137nC | ||
Maximum Power Dissipation Pd 890W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 21.34mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Liens connexes
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH62N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH34N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH48N65X2
- IXYS HiperFET 46 A 3-Pin TO-247