IXYS Single X2-Class 1 Type N, Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-247 IXTH12N65X2
- N° de stock RS:
- 146-1786
- Référence fabricant:
- IXTH12N65X2
- Fabricant:
- IXYS
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 146-1786
- Référence fabricant:
- IXTH12N65X2
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | X2-Class | |
| Package Type | TO-247 | |
| Mount Type | Through Hole, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 180W | |
| Forward Voltage Vf | 1.4V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 5.3mm | |
| Length | 16.24mm | |
| Width | 21.45 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series X2-Class | ||
Package Type TO-247 | ||
Mount Type Through Hole, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 180W | ||
Forward Voltage Vf 1.4V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 5.3mm | ||
Length 16.24mm | ||
Width 21.45 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- US
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Liens connexes
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