Infineon HEXFET N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC IRL6342TRPBF

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
915-5089
Référence fabricant:
IRL6342TRPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Transistor Material

Si

Width

4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

11 nC @ 4.5 V

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 9.9A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRL6342TRPBF


This N-channel MOSFET delivers solid performance for a range of electronic applications, capable of continuous drain current up to 9.9A and a drain-source voltage of 30V. It operates over a temperature range of -55°C to +150°C, making it suitable for both general and high-performance environments.

Features & Benefits


• Utilises HEXFET technology for enhanced efficiency
• Low on-resistance for reduced power losses
• Surface-mounted design for straightforward installation
• High-temperature operation improves reliability in various tasks
• Compliant with RoHS for environmentally conscious applications
• Supports enhancement mode operation for accurate control

Applications


• Suitable for power supply circuits
• Applicable in motor control systems
• Effective in battery management
• Ideal for diverse switching power

What are the maximum ratings for the device?


The device supports a maximum drain-to-source voltage of 30 V and a gate-to-source voltage of ±12V.

How does it perform in high-temperature environments?


It operates efficiently within a range of -55°C to +150°C, fitting for various applications.

Is it compatible with standard PCB layouts?


Yes, the surface mount design facilitates easy integration into standard PCB layouts.

What is the advantage of using a low-resistance MOSFET?


A low on-resistance of up to 19 mΩ minimises power loss, enhancing overall efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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