Infineon HEXFET Type N-Channel Power MOSFET, 202 A, 40 V Enhancement, 3-Pin TO-220AB

N° de stock RS:: 913-3837
Référence fabricant:: IRF1404PBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel Power MOSFET, 202 A, 40 V Enhancement, 3-Pin TO-220AB

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

53,80 €

(TVA exclue)

65,10 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

700 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
50 - 50	1,076 €	53,80 €
100 - 200	0,95 €	47,50 €
250 - 450	0,926 €	46,30 €
500 - 950	0,902 €	45,10 €
1000 +	0,879 €	43,95 €

*Prix donné à titre indicatif

N° de stock RS:: 913-3837
Référence fabricant:: IRF1404PBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	202A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-220AB
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.004Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	131nC
	Forward Voltage Vf	1.5V
	Maximum Power Dissipation Pd	333W
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.83 mm
	Length	10.67mm
	Height	8.77mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 202A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-220AB
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.004Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 131nC
	Forward Voltage Vf 1.5V
	Maximum Power Dissipation Pd 333W
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.83 mm
	Length 10.67mm
	Height 8.77mm
	Automotive Standard No

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Pays d'origine :: CN

Infineon HEXFET Series MOSFET, 202A Maximum Continuous Drain Current, 333W Maximum Power Dissipation - IRF1404PBF

This power MOSFET is designed for high efficiency and dependability across various applications, making it important for professionals in automation, electronics, and electrical engineering. The advanced processing techniques used ensure minimal on-resistance and a wide operational temperature range, broadening its applicability.

Features & Benefits

• Continuous drain current of 202A supports robust performance

• Low Rds(on) of 4mΩ enhances energy efficiency

• Rapid switching capabilities improve overall performance

• Capable of operating at high temperatures, reaching up to 175°C

• Employs Si MOSFET technology for effective thermal management

• Comes in a TO-220AB package for straightforward mounting

Applications

• Employed in industrial automation systems for efficient power switching

• Suitable for high current motor controls and drives

• Ideal for power supply prioritising efficiency

• Utilised in renewable energy systems for effective power management

What type of voltage can be managed?

The device can support voltage levels up to 40V between the drain and source, offering versatility for various voltage regulation applications.

How does its low on-resistance impact system efficiency?

The low Rds(on) significantly reduces power loss during operation, leading to improved system efficiency by minimising energy waste.

What temperatures can it withstand during operation?

It is designed to function efficiently within a temperature range of -55°C to +175°C, making it appropriate for challenging environments.

Can it handle pulsed drain currents?

Yes, it can accommodate pulsed drain currents up to 808A, which provides flexibility for different application needs.

What is the significance of the TO-220AB package?

The TO-220AB package facilitates effective heat dissipation and convenient mounting, suitable for both commercial and industrial uses.