Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 8-Pin TDSON BSC600N25NS3GATMA1

N° de stock RS:: 906-4303
Référence fabricant:: BSC600N25NS3GATMA1
Fabricant:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 8-Pin TDSON BSC600N25NS3GATMA1

Sous-total (1 paquet de 5 unités)*

13,97 €

(TVA exclue)

16,905 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 4 510 unité(s) expédiée(s) à partir du 10 août 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le paquet*
5 +	2,794 €	13,97 €

*Prix donné à titre indicatif

N° de stock RS:: 906-4303
Référence fabricant:: BSC600N25NS3GATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TDSON
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.1mm
	Length	6.1mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 250V
	Package Type TDSON
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.1mm
	Length 6.1mm
	Automotive Standard No

Statut RoHS : Exempté

Infineon OptiMOS 3 Series MOSFET, 250V Drain Source Voltage, 25A Continuous Drain Current - BSC600N25NS3GATMA1

This MOSFET is a high-voltage N-channel transistor designed for power switching in surface‑mount applications. It operates across an extended thermal range and is suited to circuits requiring robust drain‑to‑source voltage handling and moderate continuous current. The device is supplied in an 8‑pin TDSON package for compact board‑level integration.

Features and Benefits:

• 250V drain voltage enables high‑voltage switching applications
• 25A continuous current supports substantial load handling
• 60mΩ Rds(on) reduces conduction losses during operation
• 22nC typical gate charge enables responsive switching performance
• 125W maximum power dissipation allows elevated thermal loading

Applications

• Suitable for high‑voltage DC-DC converters on power boards
• Ideal for synchronous rectification in power supplies
• Used with motor‑drive stages requiring 25A handling
• Can be used for switch‑mode power supplies with tight footprints
• Appropriate for industrial switching circuits exposed to temperature extremes

What gate voltage limits should be observed during design?

The gate‑source voltage must not exceed 20V to prevent gate‑oxide stress and ensure device reliability.

How does the channel type affect circuit topology choices?

As an N‑channel enhancement device, it is typically placed on the low‑side of switches or used in synchronous topologies for improved efficiency.

What thermal environment can it tolerate during operation?

The component functions from -55°C up to 150°C, permitting use in wide‑temperature installations where ambient conditions vary.

Which package mounting considerations are recommended?

The TDSON surface‑mount format requires appropriate PCB thermal pads and soldering profiles to manage heat dissipation and mechanical stability.