Infineon OptiMOS 5 N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON BSC028N06NSATMA1
- N° de stock RS:
- 906-4296
- Référence fabricant:
- BSC028N06NSATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
19,56 €
(TVA exclue)
23,67 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 1,956 € | 19,56 € |
| 50 - 90 | 1,86 € | 18,60 € |
| 100 - 240 | 1,78 € | 17,80 € |
| 250 - 490 | 1,702 € | 17,02 € |
| 500 + | 1,584 € | 15,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 906-4296
- Référence fabricant:
- BSC028N06NSATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.35mm | |
| Standards/Approvals | Pb Free, Halogen Free (IEC61249-2-21), JEDEC (J-STD20, JESD22), RoHS | |
| Height | 1.1mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Width 5.35mm | ||
Standards/Approvals Pb Free, Halogen Free (IEC61249-2-21), JEDEC (J-STD20, JESD22), RoHS | ||
Height 1.1mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
Statut RoHS : Exempté
Infineon OptiMOS™ 5 Series MOSFET, 137A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - BSC028N06NSATMA1
This high-power MOSFET is suitable for applications where efficiency and reliability are essential. With a maximum continuous drain current of 137A and a breakdown voltage of 60V, it is well-suited for power management systems, making it an excellent choice for professionals in automation and electronics. Its enhanced gate threshold voltage range promotes precise switching performance, ensuring effective operation in various environments.
Features & Benefits
• Supports high-power applications with a maximum power dissipation of 100W
• Low RDS(on) of 4.2mΩ for improved efficiency
• N-channel configuration for enhanced performance
• TDSON package for effective thermal management
• Minimum operating temperature of -55°C, ideal for extreme conditions
• Avalanche rated for durability under transient conditions
Applications
• Utilised in synchronous rectification circuits for power supplies
• Suitable for electric vehicles and industrial automation
• Applied in switch-mode power supplies for effective energy conversion
• Used in UPS systems for dependable power backup solutions
• Appropriate for DC-DC converters and inverters in renewable energy systems
What is the suitable temperature range for operation?
It operates effectively within a temperature range of -55°C to +150°C, accommodating diverse environmental conditions.
How does this component handle thermal management?
The device's TDSON package optimises thermal resistance, ensuring efficient heat dissipation during operation.
What gate voltage is required for optimal performance?
The maximum gate-source voltage is ±20V, while the gate threshold voltage ranges from 2.1V to 3.3V, facilitating effective drive conditions.
Can it be used in high-frequency switching applications?
Yes, it is designed with dynamic characteristics that support high-frequency switching, making it suitable for modern electronic designs.
What safeguards are in place against electrical overstress?
It is validated for industrial applications and fully avalanche tested, providing assurance against transient surges in electrical demand.
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