onsemi Isolated 2 Type N-Channel Power MOSFET, 3.5 A, 60 V Enhancement, 8-Pin SOIC NDS9945

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Sous-total (1 paquet de 10 unités)*

5,61 €

(TVA exclue)

6,79 €

(TVA incluse)

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Dernier stock RS
  • 2 210 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
  • 200 unité(s) finale(s) expédiée(s) à partir du 08 janvier 2026
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Prix par unité
le paquet*
10 +0,561 €5,61 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
903-4374
Référence fabricant:
NDS9945
Fabricant:
onsemi
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Marque

onsemi

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.5A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

12.9nC

Forward Voltage Vf

0.8V

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Length

4.9mm

Height

1.57mm

Width

3.9 mm

Number of Elements per Chip

2

Automotive Standard

No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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