onsemi Isolated 2 Type N-Channel Power MOSFET, 3.5 A, 60 V Enhancement, 8-Pin SOIC

Voir l’ensemble des MOSFETs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
166-3245
Référence fabricant:
NDS9945
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.5A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

12.9nC

Maximum Power Dissipation Pd

2W

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Width

3.9 mm

Length

4.9mm

Height

1.57mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Liens connexes