Infineon OptiMOS 3 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-263 IPB034N06L3GATMA1
- N° de stock RS:
- 897-7419
- Numéro d'article Distrelec:
- 304-44-435
- Référence fabricant:
- IPB034N06L3GATMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
10,40 €
(TVA exclue)
12,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 5 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 3 885 unité(s) expédiée(s) à partir du 12 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 2,08 € | 10,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 897-7419
- Numéro d'article Distrelec:
- 304-44-435
- Référence fabricant:
- IPB034N06L3GATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Height | 4.57mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Height 4.57mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Statut RoHS non applicable
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
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