Infineon CoolMOS E6 N-Channel MOSFET, 20 A, 700 V, 3-Pin TO-220 IPP65R190E6XKSA1

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
857-6930
Référence fabricant:
IPP65R190E6XKSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

700 V

Package Type

TO-220

Series

CoolMOS E6

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Transistor Material

Si

Length

10.36mm

Width

4.57mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

73 nC @ 10 V

Height

15.95mm

Minimum Operating Temperature

-55 °C

Infineon CoolMOS™E6/P6 series Power MOSFET


The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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