Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V Enhancement, 3-Pin TO-252 IRLR3636TRPBF
- N° de stock RS:
- 830-3372
- Référence fabricant:
- IRLR3636TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
13,23 €
(TVA exclue)
16,01 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 280 unité(s) expédiée(s) à partir du 29 décembre 2025
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 1,323 € | 13,23 € |
| 50 - 90 | 1,072 € | 10,72 € |
| 100 - 240 | 1,005 € | 10,05 € |
| 250 - 490 | 0,926 € | 9,26 € |
| 500 + | 0,861 € | 8,61 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 830-3372
- Référence fabricant:
- IRLR3636TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 143W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 143W | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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