Infineon HEXFET N-Channel MOSFET, 99 A, 60 V Enhancement, 3-Pin TO-252 IRLR3636TRPBF
- N° de stock RS:
- 830-3372
- Référence fabricant:
- IRLR3636TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
13,80 €
(TVA exclue)
16,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 250 unité(s) expédiée(s) à partir du 21 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 1,38 € | 13,80 € |
| 50 - 90 | 1,116 € | 11,16 € |
| 100 - 240 | 1,049 € | 10,49 € |
| 250 - 490 | 0,966 € | 9,66 € |
| 500 + | 0,898 € | 8,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 830-3372
- Référence fabricant:
- IRLR3636TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 143W | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 143W | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 16V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Width 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 99A Maximum Continuous Drain Current - IRLR3636TRPBF
This n-channel enhancement MOSFET from Infineon is a power transistor designed for high-current switching in surface-mounted circuitry. It operates across a wide temperature span and suits applications requiring robust drain-source voltage handling and substantial continuous current capacity. The device features a TO-252 package for compact board-level mounting and a gate rating that supports typical gate-drive voltages.
Features and Benefits:
• Maximum continuous drain current 99A enables high-current switching
• Maximum drain-source voltage 60V supports mid-voltage systems
• Very low Rds(on) 8.3mΩ reduces conduction losses
• Maximum power dissipation 143W allows sustained high-power operation
• Typical gate charge 49nC permits predictable switching dynamics
• Forward voltage 1.3V minimises voltage drop under load
• Maximum drain-source voltage 60V supports mid-voltage systems
• Very low Rds(on) 8.3mΩ reduces conduction losses
• Maximum power dissipation 143W allows sustained high-power operation
• Typical gate charge 49nC permits predictable switching dynamics
• Forward voltage 1.3V minimises voltage drop under load
Applications
• Ideal for motor driver stages in electric actuators
• Suitable for high-current DC-DC converters and regulators
• Used with battery management and power distribution modules
• Can be used for synchronous rectification in power supplies
• Suitable for industrial switching in variable-speed drives
• Suitable for high-current DC-DC converters and regulators
• Used with battery management and power distribution modules
• Can be used for synchronous rectification in power supplies
• Suitable for industrial switching in variable-speed drives
What gate-voltage limits must be observed during design?
The device must not be driven beyond a gate-source rating of 16V to avoid gate oxide stress and ensure reliable switching.
What thermal conditions can it tolerate in operation?
The transistor is specified to function between -55°C and 175°C, allowing use in demanding thermal environments with appropriate thermal management.
How does the package affect board layout and mounting?
The TO-252 surface-mount format provides a compact footprint and thermal path to the PCB, facilitating low-inductance connections and efficient heat transfer.
How does its channel type influence switching behaviour?
Being an N-channel enhancement device means it requires a positive gate drive relative to the source to turn on, offering low Rds(on) when appropriately driven.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252 IRLR3636TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRLR2905ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IRFR7546TRPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252