Infineon HEXFET Type N-Channel MOSFET, 25 A, 55 V Enhancement, 3-Pin TO-252 IRLR3105TRPBF

N° de stock RS:: 830-3360
Référence fabricant:: IRLR3105TRPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 25 A, 55 V Enhancement, 3-Pin TO-252 IRLR3105TRPBF

Offre groupée disponible

Sous-total (1 paquet de 10 unités)*

10,10 €

(TVA exclue)

12,20 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

Plus 3 950 unité(s) expédiée(s) à partir du 29 décembre 2025

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Unité	Prix par unité	le paquet*
10 - 40	1,01 €	10,10 €
50 - 90	0,809 €	8,09 €
100 - 240	0,759 €	7,59 €
250 - 490	0,706 €	7,06 €
500 +	0,455 €	4,55 €

*Prix donné à titre indicatif

N° de stock RS:: 830-3360
Référence fabricant:: IRLR3105TRPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	43mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	57W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	20nC
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	2.39mm
	Width	6.22 mm
	Length	6.73mm
	Distrelec Product Id	304-44-479
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 43mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 57W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 20nC
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 2.39mm
	Width 6.22 mm
	Length 6.73mm
	Distrelec Product Id 304-44-479
	Automotive Standard No

Pays d'origine :: CN

Infineon HEXFET Series MOSFET, 25A Maximum Continuous Drain Current, 57W Maximum Power Dissipation - IRLR3105TRPBF

This MOSFET is intended for high-performance applications where electrical power control is critical. It provides efficient switching and effective thermal management, functioning within a wide temperature range, thus making it an advantageous choice for professionals in automation, electronics, and electrical sectors.

Features & Benefits

• Improves efficiency with low Rds(on) for reduced power loss

• Supports a maximum continuous drain current of 25A

• Allows dual gate-source voltage levels for added flexibility

• Maintains thermal stability with a maximum operating temperature of +175°C

• Compact DPAK TO-252 package ensures straightforward surface mounting

• Designed for Rapid switching speeds for enhanced performance

Applications

• Controls motor drives in automation systems

• Utilised in power management circuits for energy efficiency

• Integrated into DC-DC converters for electronic devices

• Suitable for industrial equipment demanding high reliability

• Employed in battery management systems for optimal operation

What is the operating temperature range?

The operating temperature range is -55°C to +175°C, offering versatility across various environments.

How does it handle switching speed?

It is built for fast switching, ensuring high performance in applications necessitating quick on-off cycles.

What type of mounting does it support?

This device is designed for surface mount applications using vapour phase, infrared, or wave soldering techniques.

Can it be used in high-voltage applications?

Yes, it operates with a maximum drain-source voltage of 55V, making it apt for high-voltage circuits.

What considerations should be MADE for power dissipation?

Power dissipation can reach up to 57W, with a derating factor of 0.38W/°C to ensure safe operation in various thermal conditions.