Infineon HEXFET Type N-Channel MOSFET, 25 A, 55 V Enhancement, 3-Pin TO-252
- N° de stock RS:
- 165-5922
- Référence fabricant:
- IRLR3105TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 2000 unités)*
906,00 €
(TVA exclue)
1 096,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 000 unité(s) expédiée(s) à partir du 01 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 - 2000 | 0,453 € | 906,00 € |
| 4000 + | 0,43 € | 860,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-5922
- Référence fabricant:
- IRLR3105TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 43mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 43mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 25A Maximum Continuous Drain Current, 57W Maximum Power Dissipation - IRLR3105TRPBF
This MOSFET is intended for high-performance applications where electrical power control is critical. It provides efficient switching and effective thermal management, functioning within a wide temperature range, thus making it an advantageous choice for professionals in automation, electronics, and electrical sectors.
Features & Benefits
• Improves efficiency with low Rds(on) for reduced power loss
• Supports a maximum continuous drain current of 25A
• Allows dual gate-source voltage levels for added flexibility
• Maintains thermal stability with a maximum operating temperature of +175°C
• Compact DPAK TO-252 package ensures straightforward surface mounting
• Designed for Rapid switching speeds for enhanced performance
Applications
• Controls motor drives in automation systems
• Utilised in power management circuits for energy efficiency
• Integrated into DC-DC converters for electronic devices
• Suitable for industrial equipment demanding high reliability
• Employed in battery management systems for optimal operation
What is the operating temperature range?
The operating temperature range is -55°C to +175°C, offering versatility across various environments.
How does it handle switching speed?
It is built for fast switching, ensuring high performance in applications necessitating quick on-off cycles.
What type of mounting does it support?
This device is designed for surface mount applications using vapour phase, infrared, or wave soldering techniques.
Can it be used in high-voltage applications?
Yes, it operates with a maximum drain-source voltage of 55V, making it apt for high-voltage circuits.
What considerations should be MADE for power dissipation?
Power dissipation can reach up to 57W, with a derating factor of 0.38W/°C to ensure safe operation in various thermal conditions.
Liens connexes
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR3105TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V DPAK IRLR3705ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V DPAK IRFR2405TRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR1205TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2705TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR024NTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR4105ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905TRPBF
