Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1

N° de stock RS:: 827-5120
Référence fabricant:: IPD30N08S2L21ATMA1
Fabricant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1

Sous-total (1 paquet de 25 unités)*

25,20 €

(TVA exclue)

30,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 2 400 unité(s) expédiée(s) à partir du 10 août 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le paquet*
25 +	1,008 €	25,20 €

*Prix donné à titre indicatif

N° de stock RS:: 827-5120
Référence fabricant:: IPD30N08S2L21ATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	75V
	Series	OptiMOS
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	26mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	136W
	Typical Gate Charge Qg @ Vgs	56nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 75V
	Series OptiMOS
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 26mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 136W
	Typical Gate Charge Qg @ Vgs 56nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Statut RoHS non applicable

Infineon OptiMOS Series MOSFET, 75V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - IPD30N08S2L21ATMA1

This MOSFET is a power switching transistor designed for demanding electronic systems, providing controlled conduction between drain and source in N-channel enhancement-mode configurations. It is intended for surface-mount assembly in compact power designs and for use where elevated operating temperatures and automotive-grade qualification are required.

Features and Benefits:

• 75V drain voltage enabling robust high-voltage switching
• 30A continuous current supporting substantial load delivery
• 26mΩ low Rds(on) reducing conduction losses
• 136W dissipation capacity aiding thermal margin in designs
• 56nC typical gate charge improving switching speed control
• ±20V gate tolerance allowing flexible gate-drive schemes

Applications

• Suitable for automotive DC-DC converter stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive inverter front-end circuits
• Can be used for high-efficiency point-of-load converters
• Suitable for board-level power management in vehicles

What packaging type should designers expect for PCB layout?

The device is supplied in a TO-252 package intended for surface mounting, which affects land-pattern and thermal-pad design.

How does the device handle extreme ambient conditions?

It is rated to operate across a wide temperature span from -55°C up to 175°C to suit high-temperature environments.

What gate-drive considerations are required for control circuitry?

The maximum gate-source rating is ±20V

gate-drive circuits should limit excursions within this range and account for the 56nC typical gate charge when sizing drivers.

Are there specific thermal performance constraints to plan for?

With a maximum power dissipation of 136W, thermal management must consider conduction paths and board-level heat sinking to maintain junction limits.