Infineon OptiMOS™ 2 N-Channel MOSFET, 3.8 A, 20 V, 3-Pin SOT-346 BSR202NL6327HTSA1

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N° de stock RS:
826-9386
Référence fabricant:
BSR202NL6327HTSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

20 V

Series

OptiMOS™ 2

Package Type

SOT-346 (SC-59)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

5.8 nC @ 4.5 V

Length

3mm

Transistor Material

Si

Width

1.6mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

1.1mm

Minimum Operating Temperature

-55 °C

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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