onsemi UniFET N-Channel MOSFET, 28 A, 500 V, 3-Pin TO-3PN FDA28N50F
- N° de stock RS:
- 809-0783
- Référence fabricant:
- FDA28N50F
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
4,80 €
(TVA exclue)
5,81 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 - 9 | 4,80 € |
| 10 - 99 | 4,14 € |
| 100 - 499 | 3,58 € |
| 500 - 999 | 3,16 € |
| 1000 + | 2,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 809-0783
- Référence fabricant:
- FDA28N50F
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 28 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-3PN | |
| Series | UniFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 175 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 310 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 80 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 15.8mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5mm | |
| Height | 20.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 28 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-3PN | ||
Series UniFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 175 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 80 nC @ 10 V | ||
Transistor Material Si | ||
Length 15.8mm | ||
Maximum Operating Temperature +150 °C | ||
Width 5mm | ||
Height 20.1mm | ||
Minimum Operating Temperature -55 °C | ||
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