onsemi UltraFET Type N-Channel MOSFET, 75 A, 80 V Enhancement, 3-Pin TO-220 HUF75645P3

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Sous-total (1 paquet de 2 unités)*

4,97 €

(TVA exclue)

6,014 €

(TVA incluse)

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  • 440 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité
Prix par unité
le paquet*
2 - 82,485 €4,97 €
10 - 181,73 €3,46 €
20 - 981,62 €3,24 €
100 - 1981,52 €3,04 €
200 +1,39 €2,78 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
807-8708
Référence fabricant:
HUF75645P3
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-220

Series

UltraFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

270W

Forward Voltage Vf

1.25V

Typical Gate Charge Qg @ Vgs

195nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

16.3mm

Width

4.7 mm

Automotive Standard

No

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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