onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.5 A, 100 V Enhancement, 8-Pin SOIC FDS3992

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Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

8,83 €

(TVA exclue)

10,685 €

(TVA incluse)

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Temporairement en rupture de stock
  • 1 735 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité
Prix par unité
le paquet*
5 - 201,766 €8,83 €
25 - 1201,622 €8,11 €
125 - 6201,592 €7,96 €
625 - 12451,56 €7,80 €
1250 +1,442 €7,21 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
806-3649
Référence fabricant:
FDS3992
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

100V

Series

PowerTrench

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

123mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

2.5W

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Length

4.9mm

Standards/Approvals

No

Width

3.9 mm

Height

1.575mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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