onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC

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Sous-total (1 bobine de 2500 unités)*

695,00 €

(TVA exclue)

840,00 €

(TVA incluse)

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Pénurie d'approvisionnement
  • 7 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Unité
Prix par unité
la bobine*
2500 +0,278 €695,00 €

*Prix donné à titre indicatif

N° de stock RS:
166-3054
Référence fabricant:
FDS6912A
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.6W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

5.8nC

Forward Voltage Vf

0.75V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5mm

Height

1.5mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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