onsemi 2N7002K Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002K
- N° de stock RS:
- 805-1126
- Référence fabricant:
- 2N7002K
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 100 unités)*
8,30 €
(TVA exclue)
10,00 €
(TVA incluse)
Ajouter 1300 unités pour bénéficier d'une livraison gratuite
En stock
- Plus 1 000 unité(s) expédiée(s) à partir du 23 février 2026
- Plus 21 000 unité(s) expédiée(s) à partir du 02 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 100 - 400 | 0,083 € | 8,30 € |
| 500 - 900 | 0,071 € | 7,10 € |
| 1000 + | 0,062 € | 6,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 805-1126
- Référence fabricant:
- 2N7002K
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Automotive Standard AEC-Q101 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi 2N7002K Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay 2N7002K Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002K-T1-GE3
- Vishay 2N7002K Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23
- onsemi 2N7002K Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- onsemi 2N7002K Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002KT1G
- DiodesZetex 2N7002 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002K-7
- onsemi 2N7002KW Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- onsemi 2N7002KW Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002KW