IXYS Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227
- N° de stock RS:
- 804-7583
- Numéro d'article Distrelec:
- 302-53-379
- Référence fabricant:
- IXFN80N50Q3
- Fabricant:
- IXYS
Sous-total (1 unité)*
50,16 €
(TVA exclue)
60,69 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 14 septembre 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 50,16 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 804-7583
- Numéro d'article Distrelec:
- 302-53-379
- Référence fabricant:
- IXFN80N50Q3
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 200nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 780W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Height | 9.6mm | |
| Width | 25.07 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253379 | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 200nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 780W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Height 9.6mm | ||
Width 25.07 mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253379 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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