IXYS Single HiperFET, Q3-Class 1 N-Channel MOSFET, 38 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN44N100Q3
- N° de stock RS:
- 168-4755
- Référence fabricant:
- IXFN44N100Q3
- Fabricant:
- IXYS
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 168-4755
- Référence fabricant:
- IXFN44N100Q3
- Fabricant:
- IXYS
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Transistor Configuration | Single | |
| Series | HiperFET, Q3-Class | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 38 A | |
| Maximum Drain Source Voltage (Vds) | 1 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 4 | |
| Package Type | SOT-227 | |
| Height | 9.6 mm | |
| Length | 38.23 mm | |
| Maximum Drain Source Resistance (Rds) | 220 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 30 V, -30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 960 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Screw | |
| Width | 25.07 mm | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Transistor Configuration Single | ||
Series HiperFET, Q3-Class | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 38 A | ||
Maximum Drain Source Voltage (Vds) 1 kV | ||
Channel Mode Enhancement | ||
Pin Count 4 | ||
Package Type SOT-227 | ||
Height 9.6 mm | ||
Length 38.23 mm | ||
Maximum Drain Source Resistance (Rds) 220 mΩ | ||
Maximum Gate Source Voltage (Vgs) 30 V, -30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 960 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Screw | ||
Width 25.07 mm | ||
- Pays d'origine :
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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