IXYS Single HiperFET, Q3-Class 1 Type N-Channel MOSFET, 38 A, 1000 V Enhancement, 4-Pin SOT-227 IXFN44N100Q3
- N° de stock RS:
- 168-4755
- Référence fabricant:
- IXFN44N100Q3
- Fabricant:
- IXYS
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 168-4755
- Référence fabricant:
- IXFN44N100Q3
- Fabricant:
- IXYS
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 1000V | |
| Series | HiperFET, Q3-Class | |
| Package Type | SOT-227 | |
| Mount Type | Screw | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 220mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30, -30V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 38.23mm | |
| Width | 25.07mm | |
| Height | 9.6mm | |
| Number of Elements per Chip | 1 | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 1000V | ||
Series HiperFET, Q3-Class | ||
Package Type SOT-227 | ||
Mount Type Screw | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 220mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30, -30V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 38.23mm | ||
Width 25.07mm | ||
Height 9.6mm | ||
Number of Elements per Chip 1 | ||
- Pays d'origine :
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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