onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 7 A, 30 V Enhancement, 8-Pin ECH ECH8661-TL-H

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Pénurie d'approvisionnement
En raison d'une pénurie d'approvisionnement mondial, nous ne savons pas quand ce produit sera à nouveau en stock.
Options de conditionnement :
N° de stock RS:
802-0850
Référence fabricant:
ECH8661-TL-H
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P, Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

30V

Package Type

ECH

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

39mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.3W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

11.8nC

Forward Voltage Vf

0.79V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

2.9mm

Width

2.3 mm

Standards/Approvals

No

Height

0.9mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, ON Semiconductor


The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

MOSFET Transistors, ON Semiconductor


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