IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 3-Pin TO-264 IXFK24N100Q3
- N° de stock RS:
- 801-1405
- Numéro d'article Distrelec:
- 302-53-345
- Référence fabricant:
- IXFK24N100Q3
- Fabricant:
- IXYS
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 801-1405
- Numéro d'article Distrelec:
- 302-53-345
- Référence fabricant:
- IXFK24N100Q3
- Fabricant:
- IXYS
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-264 | |
| Series | HiperFET, Q3-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 440mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1kW | |
| Maximum Operating Temperature | 150°C | |
| Length | 19.96mm | |
| Standards/Approvals | No | |
| Height | 26.16mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-264 | ||
Series HiperFET, Q3-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 440mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1kW | ||
Maximum Operating Temperature 150°C | ||
Length 19.96mm | ||
Standards/Approvals No | ||
Height 26.16mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS