onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC FDS6912A

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Sous-total (1 paquet de 25 unités)*

9,625 €

(TVA exclue)

11,65 €

(TVA incluse)

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  • 25 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
  • 7 875 unité(s) finale(s) expédiée(s) à partir du 27 janvier 2026
Unité
Prix par unité
le paquet*
25 +0,385 €9,63 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
772-9225
Référence fabricant:
FDS6912A
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5.8nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.75V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.6W

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4 mm

Length

5mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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