N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220AB Vishay SiHP30N60E-GE3

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
768-9348P
Référence fabricant:
SiHP30N60E-GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.51mm

Typical Gate Charge @ Vgs

85 nC @ 10 V

Number of Elements per Chip

1

Width

4.65mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Series

E Series

Minimum Operating Temperature

-55 °C

Height

15.49mm

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses


MOSFET Transistors, Vishay Semiconductor

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