onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET, 2.6 A, 20 V Enhancement, 6-Pin MicroFET Thin FDME1023PZT

N° de stock RS:: 759-9572
Référence fabricant:: FDME1023PZT
Fabricant:: onsemi

onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET, 2.6 A, 20 V Enhancement, 6-Pin MicroFET Thin FDME1023PZT

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

2,32 €

(TVA exclue)

2,805 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Dernier stock RS

4 285 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	le paquet*
5 - 5	0,464 €	2,32 €
10 - 95	0,448 €	2,24 €
100 - 495	0,44 €	2,20 €
500 - 995	0,43 €	2,15 €
1000 +	0,418 €	2,09 €

*Prix donné à titre indicatif

N° de stock RS:: 759-9572
Référence fabricant:: FDME1023PZT
Fabricant:: onsemi

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	2.6A
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	MicroFET Thin
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	142mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	7.7nC
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	1.4W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Width	1.6 mm
	Length	1.6mm
	Height	0.5mm
	Standards/Approvals	RoHS
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 2.6A
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type MicroFET Thin
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 142mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 7.7nC
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 1.4W
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Width 1.6 mm
	Length 1.6mm
	Height 0.5mm
	Standards/Approvals RoHS
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET, 2.6 A, 20 V Enhancement, 6-Pin MicroFET Thin FDME1023PZT

Frais de livraison offerts pour toute commande de plus de 75,00 €

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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