Références fabricant

onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET, 2.6 A, 20 V Enhancement, 6-Pin MicroFET Thin

N° de stock RS:: 166-2712
Référence fabricant:: FDME1023PZT
Fabricant:: onsemi

onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET, 2.6 A, 20 V Enhancement, 6-Pin MicroFET Thin

Actuellement indisponible

Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.

N° de stock RS:: 166-2712
Référence fabricant:: FDME1023PZT
Fabricant:: onsemi

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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	2.6A
	Maximum Drain Source Voltage Vds	20V
	Package Type	MicroFET Thin
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	142mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.4W
	Typical Gate Charge Qg @ Vgs	7.7nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Height	0.5mm
	Width	1.6mm
	Length	1.6mm
	Standards/Approvals	RoHS
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 2.6A
	Maximum Drain Source Voltage Vds 20V
	Package Type MicroFET Thin
	Series PowerTrench
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 142mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.4W
	Typical Gate Charge Qg @ Vgs 7.7nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Height 0.5mm
	Width 1.6mm
	Length 1.6mm
	Standards/Approvals RoHS
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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