onsemi PowerTrench Type N-Channel MOSFET, 9.5 A, 20 V Enhancement, 6-Pin MLP FDMA410NZ
- N° de stock RS:
- 739-6241
- Référence fabricant:
- FDMA410NZ
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
4,73 €
(TVA exclue)
5,725 €
(TVA incluse)
Ajouter 95 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 11 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,946 € | 4,73 € |
| 50 - 95 | 0,816 € | 4,08 € |
| 100 - 495 | 0,706 € | 3,53 € |
| 500 - 995 | 0,622 € | 3,11 € |
| 1000 + | 0,566 € | 2,83 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 739-6241
- Référence fabricant:
- FDMA410NZ
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PowerTrench | |
| Package Type | MLP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 900mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2 mm | |
| Height | 0.75mm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PowerTrench | ||
Package Type MLP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 900mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Width 2 mm | ||
Height 0.75mm | ||
Length 2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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