onsemi PowerTrench Type N-Channel MOSFET, 9.5 A, 20 V Enhancement, 6-Pin MLP
- N° de stock RS:
- 166-1819
- Référence fabricant:
- FDMA410NZ
- Fabricant:
- onsemi
Sous-total (1 bobine de 3000 unités)*
1 083,00 €
(TVA exclue)
1 311,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,361 € | 1 083,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-1819
- Référence fabricant:
- FDMA410NZ
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PowerTrench | |
| Package Type | MLP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 900mW | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Width | 2 mm | |
| Length | 2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PowerTrench | ||
Package Type MLP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 900mW | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Width 2 mm | ||
Length 2mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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