onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 5 A, 20 V Enhancement, 6-Pin MLP FDMA1024NZ
- N° de stock RS:
- 739-6216
- Référence fabricant:
- FDMA1024NZ
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
4,04 €
(TVA exclue)
4,89 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 2 170 unité(s) expédiée(s) à partir du 05 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,808 € | 4,04 € |
| 50 - 95 | 0,698 € | 3,49 € |
| 100 - 495 | 0,604 € | 3,02 € |
| 500 - 995 | 0,532 € | 2,66 € |
| 1000 + | 0,484 € | 2,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 739-6216
- Référence fabricant:
- FDMA1024NZ
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PowerTrench | |
| Package Type | MLP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 114mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 5.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PowerTrench | ||
Package Type MLP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 114mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 5.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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