onsemi PowerTrench Type N-Channel MOSFET, 58 A, 30 V Enhancement, 3-Pin TO-252 FDD8880
- N° de stock RS:
- 739-0151
- Référence fabricant:
- FDD8880
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
6,10 €
(TVA exclue)
7,40 €
(TVA incluse)
Ajouter 75 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- 31 965 unité(s) expédiée(s) à partir du 26 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,22 € | 6,10 € |
| 50 - 95 | 1,052 € | 5,26 € |
| 100 - 495 | 0,912 € | 4,56 € |
| 500 - 995 | 0,802 € | 4,01 € |
| 1000 + | 0,73 € | 3,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 739-0151
- Référence fabricant:
- FDD8880
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 55W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 55W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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