Vishay IRF840S N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-263 IRF840SPBF
- N° de stock RS:
- 708-4752
- Numéro d'article Distrelec:
- 304-36-067
- Référence fabricant:
- IRF840SPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
11,88 €
(TVA exclue)
14,375 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 65 unité(s) expédiée(s) à partir du 21 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,376 € | 11,88 € |
| 50 - 120 | 2,232 € | 11,16 € |
| 125 - 245 | 2,136 € | 10,68 € |
| 250 - 495 | 1,898 € | 9,49 € |
| 500 + | 1,784 € | 8,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 708-4752
- Numéro d'article Distrelec:
- 304-36-067
- Référence fabricant:
- IRF840SPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF840S | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65mm | |
| Standards/Approvals | RoHS | |
| Height | 4.83mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF840S | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Width 9.65mm | ||
Standards/Approvals RoHS | ||
Height 4.83mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay IRF840S Series Power MOSFET, 500V Drain Source Voltage, 125W Maximum Power Dissipation - IRF840SPBF
This power MOSFET is a high-voltage N-channel switching device designed for surface-mount applications in power conversion and control systems. It operates across a wide thermal range and is intended for use where robust voltage handling and moderate current capability are required, such as industrial power supplies and high-voltage switching stages.
Features and Benefits:
• 500V drain-source rating enables high-voltage switching
• 8A continuous drain current supports sustained load currents
• 125W power dissipation allows high-power handling
• 850mΩ Rds(on) reduces conduction losses at operational currents
• 63nC typical gate charge permits predictable switching performance
• 20V gate-source limit provides wide gate-drive margin
• 8A continuous drain current supports sustained load currents
• 125W power dissipation allows high-power handling
• 850mΩ Rds(on) reduces conduction losses at operational currents
• 63nC typical gate charge permits predictable switching performance
• 20V gate-source limit provides wide gate-drive margin
Applications
• Suitable for high-voltage power-supply switching stages
• Ideal for motor-drive inverter front-ends
• Used with boost-converter topologies in industrial units
• Can be used for switch-mode power-rectification modules
• Suitable for high-voltage load switching in test equipment
• Ideal for motor-drive inverter front-ends
• Used with boost-converter topologies in industrial units
• Can be used for switch-mode power-rectification modules
• Suitable for high-voltage load switching in test equipment
What mounting method is required for reliable assembly?
It is supplied in a TO-263 package configured for surface-mount PCB attachment, enabling reflow soldering and thermal connection to a PCB copper area.
How does the device perform across temperature extremes?
The junction is rated to operate from -55°C up to 150°C, allowing use in environments with wide ambient and thermal swings.
What gate-drive limitations must be observed?
Gate-source voltage must not exceed 20V to prevent device damage, so gate-drive circuitry should include appropriate clamping or level control.
Are there automotive qualifications for this part?
It is not specified as meeting automotive standards, so it should not be assumed automotive-grade for vehicle-safety applications.
Liens connexes
- Vishay IRF840S Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-263 IRF840SPBF
- Vishay IRF840 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- Vishay IRF830A Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-263 IRF830ASPBF
- Vishay IRF840AS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263 IRF840ASPBF
- Vishay SiHF840S Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263 SIHF840STRL-GE3
- Vishay Single Type N-Channel Power MOSFET 500 V TO-263 IRFS11N50APBF
- STMicroelectronics STP12NM50 Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263