onsemi Isolated PowerTrench 2 Type N-Channel Power MOSFET, 7 A, 30 V Enhancement, 8-Pin SOIC FDS8984
- N° de stock RS:
- 671-0753
- Référence fabricant:
- FDS8984
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
2,60 €
(TVA exclue)
3,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 2 410 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,52 € | 2,60 € |
| 50 - 95 | 0,448 € | 2,24 € |
| 100 - 495 | 0,388 € | 1,94 € |
| 500 - 995 | 0,34 € | 1,70 € |
| 1000 + | 0,31 € | 1,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-0753
- Référence fabricant:
- FDS8984
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Automotive Dual N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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