onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin SOIC FDS8949
- N° de stock RS:
- 671-0747
- Numéro d'article Distrelec:
- 304-43-728
- Référence fabricant:
- FDS8949
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
6,24 €
(TVA exclue)
7,55 €
(TVA incluse)
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En stock
- 40 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 3 185 unité(s) expédiée(s) à partir du 24 février 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,248 € | 6,24 € |
| 50 - 95 | 1,076 € | 5,38 € |
| 100 - 495 | 0,934 € | 4,67 € |
| 500 - 995 | 0,82 € | 4,10 € |
| 1000 + | 0,746 € | 3,73 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-0747
- Numéro d'article Distrelec:
- 304-43-728
- Référence fabricant:
- FDS8949
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4 mm | ||
Height 1.5mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Automotive Dual N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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