onsemi FDS Type P-Channel MOSFET, 13.5 A, 20 V Enhancement, 8-Pin SOIC FDS4465
- N° de stock RS:
- 671-0517
- Référence fabricant:
- FDS4465
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
9,96 €
(TVA exclue)
12,05 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 760 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,992 € | 9,96 € |
| 50 - 95 | 1,718 € | 8,59 € |
| 100 - 495 | 1,488 € | 7,44 € |
| 500 - 995 | 1,306 € | 6,53 € |
| 1000 + | 1,19 € | 5,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-0517
- Référence fabricant:
- FDS4465
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 13.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOIC | |
| Series | FDS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 13.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOIC | ||
Series FDS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Width 4mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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