onsemi FDS Type P-Channel MOSFET, 13.5 A, 20 V Enhancement, 8-Pin SOIC
- N° de stock RS:
- 166-2445
- Référence fabricant:
- FDS4465
- Fabricant:
- onsemi
Sous-total (1 bobine de 2500 unités)*
1 470,00 €
(TVA exclue)
1 777,50 €
(TVA incluse)
Ajouter 2500 unités pour bénéficier d'une livraison gratuite
En stock
- 5 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,588 € | 1 470,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-2445
- Référence fabricant:
- FDS4465
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | FDS | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series FDS | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi FDS Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC FDS4465
- onsemi FDS Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi FDS Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC FDS4435BZ
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
- onsemi NTMS Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
