onsemi UltraFET Type N-Channel MOSFET, 10.6 A, 60 V Enhancement, 8-Pin MLP FDMS5672

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Sous-total (1 paquet de 5 unités)*

15,26 €

(TVA exclue)

18,465 €

(TVA incluse)

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  • Plus 10 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité
Prix par unité
le paquet*
5 - 53,052 €15,26 €
10 - 952,584 €12,92 €
100 - 2452,03 €10,15 €
250 - 4951,966 €9,83 €
500 +1,718 €8,59 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
671-0390
Référence fabricant:
FDMS5672
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.6A

Maximum Drain Source Voltage Vds

60V

Package Type

MLP

Series

UltraFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

32nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5mm

Width

6 mm

Height

0.75mm

Automotive Standard

No

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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